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...Gate Bipolar Transistor Assembly The Ultimate Solution for Power Management Product Description: The Insulated Gate Bipolar Transistor Module, commonly known as IGBT Module, is a crucial component in electronic circuits, offering efficient power control and switching capabilities. This versatile module combines the features of an Insulated Gate Transistor and Diode Circuit Module...
...Gate Bipolar Transistor Assembly The Ultimate Solution for Power Management Product Description: The Insulated Gate Bipolar Transistor Module, commonly known as IGBT Module, is a crucial component in electronic circuits, offering efficient power control and switching capabilities. This versatile module combines the features of an Insulated Gate Transistor and Diode Circuit Module... more
Brand Name:KRUNTER
Model Number:KUP40H12R4-7M
Place of Origin:CHINA
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Product Description ABB FS450R17KE3/AGDR-71C S DCS INSULATED GATE BIPOLAR TRANSISTOR MODULE Technical Application *Decentralized control system *Turbine control, monitoring and protection system *Real-time information management and optimization system *...
Product Description ABB FS450R17KE3/AGDR-71C S DCS INSULATED GATE BIPOLAR TRANSISTOR MODULE Technical Application *Decentralized control system *Turbine control, monitoring and protection system *Real-time information management and optimization system *... more
Brand Name:ABB
Model Number:FS450R17KE3/AGDR-71C S
Place of Origin:SWEDEN
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...Insulated Gate Bipolar Transistor (IGBT) For B2B Buyers Product Description: An Insulated Gate Bipolar Transistor (IGBT) is a new and versatile electronic device with insulated gate, designed for use in general purpose applications. This device is designed to provide superior performance in demanding applications where normal voltage is required. The IGBT has the best of both worlds: the fast switching speed of a bipolar junction transistor
...Insulated Gate Bipolar Transistor (IGBT) For B2B Buyers Product Description: An Insulated Gate Bipolar Transistor (IGBT) is a new and versatile electronic device with insulated gate, designed for use in general purpose applications. This device is designed to provide superior performance in demanding applications where normal voltage is required. The IGBT has the best of both worlds: the fast switching speed of a bipolar junction transistor more
Brand Name:MMR
Place of Origin:China
Mounting Type:Through Hole
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...Module IGBT Module (Insulated Gate Bipolar Transistor Module) is a power semiconductor device module that integrates multiple IGBT chips, free-wheeling diodes (FWDs), and associated drive/protection circuits. It is widely applied in power electronics conversion and control systems. 1. Core Components and Operating Principles IGBT Chips: The core of the module...
...Module IGBT Module (Insulated Gate Bipolar Transistor Module) is a power semiconductor device module that integrates multiple IGBT chips, free-wheeling diodes (FWDs), and associated drive/protection circuits. It is widely applied in power electronics conversion and control systems. 1. Core Components and Operating Principles IGBT Chips: The core of the module... more
Brand Name:ZFeng
Payment Terms:L/C,D/A,D/P,T/T,Western Union,MoneyGram
Delivery Time:3 Days
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...IRG4PH50UD can be a great choice. As a power MOSFET transistor, it's designed for high performance and efficiency in a range of applications. Here are some pros and cons to consider before you buy: Pros: - High power ratings, with a maximum Vds of ...
...IRG4PH50UD can be a great choice. As a power MOSFET transistor, it's designed for high performance and efficiency in a range of applications. Here are some pros and cons to consider before you buy: Pros: - High power ratings, with a maximum Vds of ... more
Brand Name:International Rectifier
Model Number:IRG4PH50UD
Part number:IRG4PH50UD
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Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247 12 A @ 90°C 20 A @ 25°C 1200 VOLTS SHORT CIRCUIT RATED This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft ...
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247 12 A @ 90°C 20 A @ 25°C 1200 VOLTS SHORT CIRCUIT RATED This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft ... more
Model Number:MGW12N120D
Place of Origin:original factory
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PRODUCT DESCRIPTION Lastest Non Isolated IGBT Insulated Gate Bipolar Transistor Power Module TCAN1042GDQ1 IGBT Power Module Texas Instruments/TI TCAN1042GDQ1 Protocols CAN, CAN FD Number of channels (#) 1 Supply voltage (V) 4.5 to 5.5 Bus fault voltage...
PRODUCT DESCRIPTION Lastest Non Isolated IGBT Insulated Gate Bipolar Transistor Power Module TCAN1042GDQ1 IGBT Power Module Texas Instruments/TI TCAN1042GDQ1 Protocols CAN, CAN FD Number of channels (#) 1 Supply voltage (V) 4.5 to 5.5 Bus fault voltage... more
Brand Name:Texas Instruments
Model Number:TCAN1042GDQ1
Minimum Order Quantity:1 piece
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GT20J101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications • The 3rd Generation • Enhancement-Mode • High Speed: tf = 0.30 µs (max) • Low Saturation Voltage: VCE (sat) = 2.7 V (max) Characteristic Symbol ...
GT20J101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications • The 3rd Generation • Enhancement-Mode • High Speed: tf = 0.30 µs (max) • Low Saturation Voltage: VCE (sat) = 2.7 V (max) Characteristic Symbol ... more
Brand Name:TOSHIBA
Model Number:GT20J101
Place of Origin:CHINA
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APT50GT60BRDQ2G IGBT Power Module Transistors IGBTs Single APT50GT60BRDQ2G Specifications Part Status Active IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 110A Current - Collector Pulsed (Icm) 150A Vce(on) (...
APT50GT60BRDQ2G IGBT Power Module Transistors IGBTs Single APT50GT60BRDQ2G Specifications Part Status Active IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 110A Current - Collector Pulsed (Icm) 150A Vce(on) (... more
Brand Name:Microsemi Corporation
Model Number:APT50GT60BRDQ2G
Place of Origin:Original
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IKWH50N65WR6XKSA1 IGBT Transistors HOME APPLIANCES 14 Infineon Technologies TRENCHSTOP™ 5 Reverse Conducting IGBTs Infineon Technologies TRENCHSTOP™ 5 Reverse Conducting IGBTs are optimized for full-rated hard switching turn off typically found in welding ...
IKWH50N65WR6XKSA1 IGBT Transistors HOME APPLIANCES 14 Infineon Technologies TRENCHSTOP™ 5 Reverse Conducting IGBTs Infineon Technologies TRENCHSTOP™ 5 Reverse Conducting IGBTs are optimized for full-rated hard switching turn off typically found in welding ... more
Brand Name:Infineon Technologies
Model Number:IKWH50N65WR6XKSA1
Minimum Order Quantity:50pcs
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IGBT Power Module Texas Instruments/TI TCAN1042GDQ1 Protocols CAN, CAN FD Number of channels (#) 1 Supply voltage (V) 4.5 to 5.5 Bus fault voltage (V) -58 to 58 Signaling rate (Max) (Mbps) 5 TI functional safety category Functional Safety-Capable Rating ...
IGBT Power Module Texas Instruments/TI TCAN1042GDQ1 Protocols CAN, CAN FD Number of channels (#) 1 Supply voltage (V) 4.5 to 5.5 Bus fault voltage (V) -58 to 58 Signaling rate (Max) (Mbps) 5 TI functional safety category Functional Safety-Capable Rating ... more
Brand Name:Texas Instruments
Model Number:TCAN1042GDQ1
Place of Origin:N/S
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IGBT Module Trench Single 1200 V 139 A 658 W Chassis Mount SOT-227
IGBT Module Trench Single 1200 V 139 A 658 W Chassis Mount SOT-227 more
Description:IGBT MOD 1200V 139A 658W SOT227
Category:Discrete Semiconductor ProductsTransistorsIGBTsIGBT Modules
Current - Collector (Ic) (Max):139 A
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...Electronic Component IC Chip Description: The NLVVHC1GT125DF1G Electronic Component IC Chip is a low voltage, high current insulated gate bipolar transistor (IGBT) chip. This chip is suitable for use in a wide range of applications including power electronics...
...Electronic Component IC Chip Description: The NLVVHC1GT125DF1G Electronic Component IC Chip is a low voltage, high current insulated gate bipolar transistor (IGBT) chip. This chip is suitable for use in a wide range of applications including power electronics... more
Brand Name:onsemi
Model Number:NLVVHC1GT125DF1G
Place of Origin:Multi-origin
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New Module 1MBI400NA-120 FUJI Module Original IGBT Power Module Part Category: Transistors Manufacturer: Fuji Electric Corp. of America Description: Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channe fuji a50l-0001-0327, a50l-0001-0327 ...
New Module 1MBI400NA-120 FUJI Module Original IGBT Power Module Part Category: Transistors Manufacturer: Fuji Electric Corp. of America Description: Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channe fuji a50l-0001-0327, a50l-0001-0327 ... more
Brand Name:Fanuc
Model Number:1MBI400NA-120
Place of Origin:Japan
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... Trench/Feld stopp IGBT 4und Emitter Controlled Diode 1 TechnischeInformation/TechnicalInformation FF300R17KE4 IGBT-Module IGBT-modules Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as
... Trench/Feld stopp IGBT 4und Emitter Controlled Diode 1 TechnischeInformation/TechnicalInformation FF300R17KE4 IGBT-Module IGBT-modules Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as more
Brand Name:INFINEON
Model Number:FF300R17KE4
Place of Origin:Original
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...MODULE Detail: Manufacture ABB Model FS300R17KE3/AGDR-76C Ordering information FS300R17KE3/AGDR-76C Catalog VFD Spares Description ABB FS300R17KE3/AGDR-76C IGBT MODULE Origin United States (US) HS Code 85389091 Dimension 16cm*16cm*12cm Weight 0.8kg The ABB FS300R17KE3AGDR-76C is a powerful combination of an Insulated-Gate Bipolar Transistor (IGBT) module...
...MODULE Detail: Manufacture ABB Model FS300R17KE3/AGDR-76C Ordering information FS300R17KE3/AGDR-76C Catalog VFD Spares Description ABB FS300R17KE3/AGDR-76C IGBT MODULE Origin United States (US) HS Code 85389091 Dimension 16cm*16cm*12cm Weight 0.8kg The ABB FS300R17KE3AGDR-76C is a powerful combination of an Insulated-Gate Bipolar Transistor (IGBT) module... more
Brand Name:ABB
Model Number:FS300R17KE3/AGDR-76C
Place of Origin:Switzerland
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Quick Detail: Molding Type Module Description: Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, ...
Quick Detail: Molding Type Module Description: Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, ... more
Brand Name:Fairchild Semiconductor
Model Number:FMG2G100US60
Place of Origin:PHILIPPINE
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...Modulated PWM DC Output Control Description: The IS200ERSCG1A is an excitation regulator static converter. The board is used to provide a pulse width modulated (PWM) DC output for regulator control. The board also provides field current functionality for photovoltaic models via IGBTs. The board houses an insulated gate bipolar transistor (IGBT) module...
...Modulated PWM DC Output Control Description: The IS200ERSCG1A is an excitation regulator static converter. The board is used to provide a pulse width modulated (PWM) DC output for regulator control. The board also provides field current functionality for photovoltaic models via IGBTs. The board houses an insulated gate bipolar transistor (IGBT) module... more
Brand Name:GE
Model Number:IS200ERSCG1A
Place of Origin:USA
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... sale and service for clients over 10 years, specialize in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor,IGBT,PCBA, prototype,BOM Kitting. Sunbeam Electronics has a
... sale and service for clients over 10 years, specialize in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor,IGBT,PCBA, prototype,BOM Kitting. Sunbeam Electronics has a more
Brand Name:ONSEMI
Model Number:FAN3224TU_F085
Place of Origin:China
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♦Email:miya@mvme.cn ♦Skype:miyazheng520 ♦QQ :2851195450 ♦Whats App:86-18020776792 General information ABB 3BHE006412R0101 IGBT (InsulatedGateBipolarTransistor), insulated gate bipolar transistor, is a composite fully controlled voltage-driven power ...
♦Email:miya@mvme.cn ♦Skype:miyazheng520 ♦QQ :2851195450 ♦Whats App:86-18020776792 General information ABB 3BHE006412R0101 IGBT (InsulatedGateBipolarTransistor), insulated gate bipolar transistor, is a composite fully controlled voltage-driven power ... more
Brand Name:ABB
Model Number:3BHE006412R0101
Place of Origin:SWEDEN
