KUP40H12R4-7M Insulated Gate Bipolar Transistor Module Assembly for Power Management
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...Gate Bipolar Transistor Assembly The Ultimate Solution for Power Management Product Description: The Insulated Gate Bipolar Transistor Module, commonly known as IGBT Module, is a crucial component in electronic circuits, offering efficient power control and switching capabilities. This versatile module combines the features of an Insulated Gate Transistor and Diode Circuit Module......
Krunter Future Tech (Dongguan) Co., Ltd.
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ABB FS450R17KE3/AGDR-71C S DCS INSULATED GATE BIPOLAR TRANSISTOR MODULE
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Product Description ABB FS450R17KE3/AGDR-71C S DCS INSULATED GATE BIPOLAR TRANSISTOR MODULE Technical Application *Decentralized control system *Turbine control, monitoring and protection system *Real-time information management and optimization system *......
Wuhan Sean Automation Equipment Co.,Ltd
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Discrete Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode ABB IGBT Module
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...Insulated Gate Bipolar Transistor (IGBT) For B2B Buyers Product Description: An Insulated Gate Bipolar Transistor (IGBT) is a new and versatile electronic device with insulated gate, designed for use in general purpose applications. This device is designed to provide superior performance in demanding applications where normal voltage is required. The IGBT has the best of both worlds: the fast switching speed of a bipolar junction transistor...
MMR TECHNOLOGY HK LIMITED
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Durable Insulated Gate Bipolar Transistor Multipurpose IRG4PH50UD
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...IRG4PH50UD can be a great choice. As a power MOSFET transistor, it's designed for high performance and efficiency in a range of applications. Here are some pros and cons to consider before you buy: Pros: - High power ratings, with a maximum Vds of ......
Yougou Electronics (Shenzhen) Co., Ltd.
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Insulated Gate Bipolar Transistor IGBT Power Module Semiconductor Device for inverter
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...Module IGBT Module (Insulated Gate Bipolar Transistor Module) is a power semiconductor device module that integrates multiple IGBT chips, free-wheeling diodes (FWDs), and associated drive/protection circuits. It is widely applied in power electronics conversion and control systems. 1. Core Components and Operating Principles IGBT Chips: The core of the module......
Guangdong Zhufeng Electric Co., Ltd.
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Non Isolated IGBT Insulated Gate Bipolar Transistor Power Module TCAN1042GDQ1
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PRODUCT DESCRIPTION Lastest Non Isolated IGBT Insulated Gate Bipolar Transistor Power Module TCAN1042GDQ1 IGBT Power Module Texas Instruments/TI TCAN1042GDQ1 Protocols CAN, CAN FD Number of channels (#) 1 Supply voltage (V) 4.5 to 5.5 Bus fault voltage......
Guangzhou Topfast Technology Co., Ltd.
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GT20J101 Thyristor Module Insulated Gate Bipolar Transistor Silicon N Channel
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...) = 2.7 V (max) Characteristic Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES +-20 V Collector current DC IC 20 A Collector current 1 ms ICP 40 A Collector ......
DELI ELECTRONICS TECHNOLOGY CO.,LTD
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General Electric DS200IIBDG1AEA DS200IIBDG1A GE Insulated Gate Bipolar Transistor Board
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... that provide a status of the processing of the board. The LEDs are visible from the interior of the circuit board cabinet and are red in color when lit. The GE Insulated Gate Bipolar Transistor (IGBT) Board DS200IIBDG1A has several connectors and when you...
Joyoung International Trading Co.,Ltd
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IKW40N65H5 Insulated Gate Bipolar Transistor IGBT Transistors 650V 74A 250W
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...Insulated Gate Bipolar Transistor Applications •Solarconverters •Uninterruptiblepowersupplies •Weldingconverters •Midtohighrangeswitchingfrequencyconverters Specifications Product Attribute Attribute Value Product Category: IGBT Transistors Technology: Si Package / Case: TO-247-3 Collector- Emitter Voltage VCEO Max: 650 V Collector-Emitter Saturation Voltage: 1.65 V Maximum Gate......
Shenzhen Retechip Electronics Co., Ltd
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IGBT 600V 22A 156W Insulated Gate Bipolar Transistor IRGB10B60KDPBF
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IRGB10B60KDPBF # Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode IGBT 600V 22A 156W TO220AB Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode ......
ChongMing Group (HK) Int'l Co., Ltd
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