TSAL4400 GaAs/GaAlAs IR Emitting Diode High Power Infrared Emitting Diode
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TSAL4400 GaAs/GaAlAs IR Emitting Diode High Power Infrared Emitting Diode FEATURES • Package type: leaded • Package form: T-1 • Dimensions (in mm): ∅ 3 • Peak wavelength: λp = 940 nm • High reliability • High ......
Anterwell Technology Ltd.
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TSAL4400 GaAs/GaAlAs IR Emitting Diode High Power Infrared Emitting Diode
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TSAL4400 GaAs/GaAlAs IR Emitting Diode High Power Infrared Emitting Diode FEATURES • Package type: leaded • Package form: T-1 • Dimensions (in mm): ∅ 3 • Peak waveleCM GROUPh: λp = 940 nm • High reliability • High radiant power • High radiant intensity • ......
ChongMing Group (HK) Int'l Co., Ltd
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Practical 0603 IR Receiver Diode , 1608 IR Emitting Diode 940nm
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...ir led 940nm 0603 smd Led 1608 IR receiver Led diode wholesale price We are a LED manufacturer based in China, offering wholesale prices on IR LED components. Our product is an IR LED with a wavelength of 940nm, housed in a 0603 SMD (Surface Mount Device) package, also known as 1608 package. This IR LED is specifically designed for IR receiver applications. It emits......
Dongguan Lanjin Optoelectronics Co., Ltd.
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860nm 1W Laser Diode 2W/3W Powerful Laser Diode PD Optional TO5 9mm Package IR Laserske Diode
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..., which is close to parallel. Very high brightness The main reason for the high brightness of the laser is directional light emission. A large number of photons are emitted in...
XINLAND LASER CO.,LTD
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RE35 60° 850nm Infrared Emitting Diode / IR LED Diode For Security Equipment
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RE35 60° Series 850nm IR Light Emitting Diode Using For Security Equipment Feature : 1. Dimension(length*width*height: mm): 3.0* 3.0* 2.53 mm 2. High Reliability 3. Low forward ......
Phenson Lighting Tech.,Ltd
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8mm IR Infrared LED|8mm IR LED| Photo-transistor| infrared emitting diode|IR LED diode|IR LED factory
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Model: 8mm IR Infrared LED Round DIP Leds Size: φ8mm Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is±0.25mm(0.01”) unless otherwise specified. 3. Lead spacing ismeasured where the leads emerge from the package. 4. Specifications ......
Guangdong Queendom Group Technology Co., Ltd.
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4035 IR Laser Diode Wavelength 940nm Current 1000mA Power 2W
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4035 IR Laser Diode Wavelength 940nm Current 1000mA Power 2W Size:40*30 Wavelength:940nm Power:2W Forward Voltage:2.2V Angle:6045or7255 Current:1000mA...
Shenzhen JNJ Optoelectronics Co., Limited
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120 Degree 2W 100W-120W SMD 730nm 840nm 850nm 740nm Ir Led Diode 3535 6868
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3535 6868 Package 120 degree 2W 100W-120W SMD 730nm 950nm Infrared IR 840nm 850nm 740nm ir led diode Ir Led Diode specifications INFRARED POWER Dominant Wavelength Optical Power IF VF Circuit WHOLE SIZE Lighting Area VIEW ANGLE LENS ......
Shenzhen Learnew Optoelectronics Technology Co., Ltd.
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Sphere Display Dome Light Emitting Diode Screen Indoor P1.5 P2 P2.5 P3 P4 P5 Light Emitting Diode Digital Sphere 4m Vide
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Sphere Display Dome Light Emitting Diode Screen Indoor P1.5 P2 P2.5 P3 P4 P5 Light Emitting Diode Digital Sphere 4m Vide Lamp size 2121 Resolution/mm 4 Pixel configuration RGB 3 in 1 Pixel density/pixels/m² ......
Shenzhen Tewei Technology Co., Ltd.
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2" S Doped GaP Semiconductor EPI Wafer N Type P Type 250um 300um Light-Emitting Diodes
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...250um 300um Light-Emitting Diodes Description: Gallium phosphide (GaP) is a group Ⅲ-V compound. The appearance is orange-red transparent crystal.Gallium phosphide is used to make inexpensive red, green and orange light-emitting diodes with low to medium ......
SHANGHAI FAMOUS TRADE CO.,LTD
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